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Impact of Al Doping on Surface Passivation of TiOx

Impact of Al Doping on Surface Passivation of TiOx

In this work, we find that the crystallization of ALD TiOx is very sensitive to the film’s thickness, where a small increase in TiOx thickness can trigger a phase change from amorphous TiOx into anatase, which causes a significant increase in J0s. More importantly, we demonstrate that the incorporation of Al ions into the TiOx films inhibits crystallization, which in turn retains excellent passivation for thicker TiOx.

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