Self-Aligned Laser Doping from Phosphorus Oxide / Aluminum Oxide

Our new paper on self-aligned local contact opening and n+ diffusion by single-step laser doping from POx/Al2O3 passivation stacks has just been published! A free download is available until 7th October 2020.

Recent Publications

Laser contacts from POx/Al2O3 passivation stacks

Laser contacts from POx/Al2O3 passivation stacks

• n+ laser doping demonstrated from POx/Al2O3 passivation stacks on silicon. • Metallised J0 of 540 fA cm−2 for n+ laser-doped region with Rsheet of 39.5 Ω/□. • Consistent with values for POCl3 furnace diffusions, indicating minimal defects. • Same POx/Al2O3 stack provides J0 of 2.5 fA cm−2 on undiffused planar surfaces. • 23.6% simulated efficiency for laser-doped n-type PERL cell based on POx/Al2O3.

Destructive Reverse Bias in Perovskite Tandem Modules

Destructive Reverse Bias in Perovskite Tandem Modules

We demonstrate how perovskite hysteresis can result in permanent reductions in power output in perovskite/silicon tandem modules—including irreversible hotspot-induced damage—from only brief periods of shading.

Impact of Al Doping on Surface Passivation of TiOx

Impact of Al Doping on Surface Passivation of TiOx

In this work, we find that the crystallization of ALD TiOx is very sensitive to the film’s thickness, where a small increase in TiOx thickness can trigger a phase change from amorphous TiOx into anatase, which causes a significant increase in J0s. More importantly, we demonstrate that the incorporation of Al ions into the TiOx films inhibits crystallization, which in turn retains excellent passivation for thicker TiOx.

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One-Minute Typical Meteorological Year Data for Australia - Corresponding data can be downloaded here for free.

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